基本信息
林智，博士，硕士生导师，IEEE Member
Email：linzhi@cqu.edu.cn
通信地址：重庆市沙坪坝区沙正街174号重庆大学A区主教1003
邮编：400044
个人简历
2009年本科毕业于电子科技大学，2015年12月获得电子科技大学微电子学与固体电子学博士学位，2016年2月加入重庆大学微电子与通信工程学院。主持主研国家自然科学基金项目、省部级和横向科研项目10余项，在IEEE Transaction on Electron Device、IEEE Electron Device Letters、Electron Letters等学术期刊上发表多篇研究论文，授权国家发明专利3项、美国发明专利1项。
硕士研究生招生方向
学术硕士：电子科学与技术(080900)
专业硕士：电子信息(085400)、电子与通信工程领域(085208)
研究领域
1）新型半导体功率器件芯片设计及其应用
2）芯片设计与功率电子系统
主要科研项目
[1]国家自然科学基金项目（No. 61604024，主持）
[2]重庆市科技计划项目基础科学与前沿技术研究专项（一般项目）（No. cstc2018jcyjAX0706，主持）
[3]中央高校基本科研业务费专项项目（No. 106112016CDJXY160003，主持）
[4]国家自然科学基金项目（No. 61504021，主研）
[5]国家自然科学基金重点项目（No. 51237001，主研）
[6]广东省科技厅项目（No. 2012B091100101，主研）
[7]广东省科技厅项目（No. 00513850141621037，主研）
代表性论文
[1]Z. Lin, J. Guo, Z. Wang, S. Hu, J. Zhou and F. Tang, "Novel Isolation Structure for High-Voltage Integrated Superjunction MOSFETs",IEEE Electron Device Letters, 2020, 41(1): 115-118.
[2]P. Li, J. Guo, S. Hu.Z. Linand F. Tang, "A Low Reverse Recovery Charge Superjunction MOSFET With an Integrated Tunneling Diode",IEEE Transactions on Electron Devices, 2019, 66(10): 4309-4313.
[3]Z. Lin, "Study on the Intrinsic Origin of Output Capacitor Hysteresis in Advanced Superjunction MOSFETs",IEEE Electron Device Letters, 2019, 40(8): 1297-1300.
[4]Z. Lin, Q. Yuan, S. Hu, X. Zhou, J. Zhou and F. Tang, "A Simulation Study of a Novel Superjunction MOSFET Embedded With an Ultrasoft Reverse-Recovery Body Diode",IEEE Transactions on Electron Devices, 2019, 66(5): 2333-2338.
[5]F. Tang, Z. Shu, M. Li, Y. Hu, X. Zhou, S. Hu,Z. Lin, P. Gan, T. Huang and A. Bermak, "A Low Power and Fast Tracking Light-to-Frequency Converter With Adaptive Power Scaling for Blood SpO2Sensing",IEEE Transactions on Biomedical Circuits and Systems, 2019, 13(1): 26-37.
[6]F. Tang, Z. Wang, Y. Xia, F. Liu, X. Zhou, S. Hu,Z. Linand A. Bermak, "An Area-Efficient Column-Parallel Digital Decimation Filter With Pre-BWI Topology for CMOS Image Sensor",IEEE Transactions on Circuits and Systems I: Regular Papers,2018, 65(8): 2524-2533.
[7]X. Xiang, X. Gao, F. Liu, M. Li, S. Huang, X. Chen, X. Zhou, S. Hu,Z. Lin, A. Bermak and F. Tang, "A Radiation-Hardened and ESD-Optimized Wireline Driver with Wide Terminal Common-Mode Voltage Range",IEEE Transactions on Nuclear Science, 2018, 65(1), pp. 566-572.
[8]X. Zhou, S. Li, F. Tang, S. Hu, Z. Lin and L. Zhang,"DANoC: An Efficient Algorithm and Hardware Codesign of Deep Neural Networks on Chip",IEEE Transactions on Neural Networks and Learning Systems, 2018, 29(7), pp. 3176-3187.
[9]X. Zhou, F. Yang, Y. Feng, Q. Li, F. Tang, S. Hu, Z. Lin and L. Zhang,"A Spatial-Temporal Method to Detect Global Influenza Epidemics Using Heterogeneous Data Collected from the Internet",IEEE/ACM Transactions on Computational Biology and Bioinformatics, 2018, 15(3), pp. 802-812.
[10]F. Liu, F. Yang, H. Wang, X. Xiang, X, Zhou, S. Hu,Z. Lin, A. Bermark and F. Tang. "Radiation-Hardened CMOS Negative Voltage Reference for Aerospace Application",IEEE Transactions on Nuclear Science, 64(9): 2505-2510, 2017.
[11]K. Cheng, S. Hu, Y. Jiang, Q. Yuan, D. Yang, Y. Huang, J. Lei,Z. Lin, X. Zhou and F. Tang. "Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate",Journal of Computational Electronics, 16(1): 83-89, 2017.
[12]Z. Lin, S. Hu, Q. Yuan, X. Zhou and F. Tang, "Low-Reverse Recovery Charge Superjunction MOSFET With a p-type Schottky Body Diode",IEEE Electron Device Letters, 2017, 38(8): 1059-1062.
[13]F. Tang, Z. Shu, K. Ye, X. Zhou, S. Hu,Z. Linand A. Bermak, "A Linear 126-dB Dynamic Range Light-to-Frequency Converter With Dark Current Suppression Up to 125 °C for Blood Oxygen Concentration Detection",IEEE Transactions on Electron Devices, 63(10): 3983-3988, 2016.
[14]Z. Linand X. Chen, "A New Solution for Superjunction Lateral Double Diffused MOSFET by Using Deep Drain Diffusion and Field Plates",IEEE Electron Device Letters, 2015, 36(6): 558-590.
[15]Z. Lin, H. Huang, and X. Chen, "An Improved Superjunction Structure With Variation Vertical Doping Profile",IEEE Transactions on Electron Devices, 2015, 62(1): 228-231.
[16]B. Yi,Z. Linand X. Chen, "Study on HK-VDMOS with Deep Trench Termination",Superlattices and Microstructures, 2014, 75(11): 278-286.
[17]B. Yi,Z. Linand X. Chen, "Snapback-free Reverse-conducting IGBT with Low Turnoff Loss",Electron Letters, 2014, 50(9): 703-705.
会议论文
[1]Z. Lin, "Analysis and Design of a Low-Power Integrated Controllable High-Voltage Start-Up Current Source",Proceedings of the 2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2019, 1-2.
[2]J. Lei, S. Hu, S. Wang andZ. Lin, "A Novel SOI Trench LDMOS with Vertical Double-RESRUF layer",Proceedings of the 2017 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC), 2017. 1-2.
[3]Z. Lin, H. Hu, J. Cheng and X. Chen, "A Versatile Low-cost Smart Power Technology Platform for Applications over Broad Current and Voltage Ranges",Proceedings of the 2013 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013. 10. 01-03.
[4]H. Hu,Z. Linand X. Chen, "A Novel High Voltage Start-up Current Source for SMPS",Proceedings of the 2012 International Symposium on Power Semiconductor Devices and ICs, 201206: 197-200.
发明专利
[1]Z. Lin, Q. Yuan, S. Han, S. Hu, J. Zhou, F. Tang, X. Zhou, HIGH-SPEED SUPERJUNCTION LATERAL INSULATED GATE BIPOLAR TRANSISTOR,专利号：US16/264654.
[2]林智，袁琦，韩姝，胡盛东，周建林，唐枋，周喜川，一种有两种载流子导电的超结功率MOSFET，专利号：ZL201810137190.X.
[3]林智，袁琦，韩姝，胡盛东，周建林，唐枋，周喜川，一种带软恢复体二极管的超结功率MOSFET,专利号：ZL201810072735.3.
[4]林智，袁琦，韩姝，胡盛东，周建林，唐枋，周喜川，一种高速超结横向绝缘栅双极型晶体管，申请号：CN201810137194.8.
