蔡文思博士，讲师
2012.09-2015.06曼彻斯特大学电子工程本科
2015.09-2019.10曼彻斯特大学电气及电子工程博士
2020.05-2023.04重庆大学光电工程学院博士后
2023.05-至今重庆大学光电工程学院讲师
研究方向
1.氧化物薄膜电子器件
2.低维半导体材料
3.发光器件、光电探测器、太阳能电池等光电子器件应用研究
承担项目及代表性研究成果
主持国家自然科学基金青年基金、JW科技委173项目、重庆市自然科学基金面上项目等国家及省部级项目8项；在Sci. Bullet., Nano Lett., IEEE Electron Device Lett., Appl. Phys. Lett.等上发表SCI论文60余篇，其中第一/通讯作者论文29篇，他引近2000次；出版全英文专著1部（排第二）；入选国家博士后国（境）外交流计划引进项目，获2019国家优秀自费留学生奖学金。
代表性论文
1.Multidentate chelation achieves bilateral passivation toward efficient and stable perovskite solar cells with minimized energy losses, H. Yang, R. Li, S. Gong, H. Wang, S. Qaid, Q. Zhou,W. Cai*, X. Chen*, J. Chen* & Z. Zang*,Nano Letters,23(18), 8610-8619, 2023 (共同通讯)
2.Low-voltage, solution-processed InZnO thin-film transistors with enhanced performance achieved by bilayer gate dielectrics, M. Li, Q. Zhuang, S. Lu, Z. Zang &W. Cai*, Applied Physics Letters,122(16), 162104, 2023 (唯一通讯)
3.Significant performance and stability improvement of low-voltage InZnO thin-film transistors by slight La doping,W. Cai, M. Li, H. Li, Q. Qian & Z. Zang,Applied Physics Letters,121(6), 062108, 2022 (第一作者)
4.Significant performance enhancement of UV-Vis self-powered CsPbBr3quantum dot-based photodetectors induced by ligand modification and P3HT embedding, M. Wang, D. Liang, W. Ma, Q. Mo, Z. Zang, Q. Qian &W. Cai*, Optics Letters, 47(17), 4512-4515, 2022(唯一通讯)
5.One-Volt, Solution-Processed InZnO Thin-Film Transistors,W. Cai, H. Li & Z. Zang,IEEE Electron Device Letters,42(4), 525-528, 2021(第一作者)
6.2D perovskite for field-effect transistors,W. Cai,H. Wang, Z. Zang & L. Ding,Science Bulletin,66(7), 648-650, 2021(第一作者)
7.Room temperature synthesis of Sn2+doped highly luminescent CsPbBr3quantum dots for high CRI white light-emitting diodes, Y. Dong, Q. Mo, S. Zhao,W. Cai*& Z. Zang,Nanoscale,13(21), 9740-9746, 2021(共同通讯)
8.Significant Performance Improvement of Oxide Thin-Film Transistors by a Self-Assembled Monolayer Treatment,W. Cai,J. Zhang, J. Wilson, J. Brownless, S. Park, L. Majewski & A. Song,Advanced Electronic Materials,6(5), 1901421, 2020(第一作者)
9.Significant Performance Enhancement of Very Thin InGaZnO Thin-Film Transistors by a Self-Assembled Monolayer Treatment,W. Cai,J. Wilson, J. Zhang, J. Brownless, X. Zhang, L. Majewski & A. Song,ACS Applied Electronic Materials,2(1), 301-308, 2020(第一作者)
10.One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOyGate Dielectric,W. Cai,S. Park, J. Zhang, J. Wilson, Y. Li, Q. Xin, L. Majewski & A. Song,IEEE Electron Device Letters,39(8), 375-378, 2018(第一作者)
联系方式
邮箱：wensi.cai@cqu.edu.cn
办公地址：重庆大学虎溪校区信息大楼B326-3
光电系